Низковольтные гетеротиристоры InP для генерации импульсов тока длительностью 50-150 ns
نویسندگان
چکیده
Current switches based on low-voltage InP heterothyristors with a maximum blocking voltage of 20V were developed and studied. In current pulse generation mode, the efficient operation low-resistance load in form capacitor was demonstrated. It has been shown that minimum turn-on delay time is about 6 ns at control amplitude 60 mA. The possibility generating pulses duration 53–154 amplitudes 38–130 A demonstrated when values changed range 56–1000nF.
منابع مشابه
30 to 50 ns liquid-crystal optical switches.
The optical switching time of twisted-nematic liquid-crystal cells using the liquid crystals, 5CB (C(5)H(11)-Ph-Ph-CN), 5OCB(C(5)H(11)-O-Ph-Ph-CN) and PCH5 (C(5)H(11)-Cy-Ph-CN) have been characterized as a function of temperature, bias voltage and switching voltage, V. The transition time from 90% to 10% transmission scales as V(-1.9) and is limited to 30 to 50 ns by the liquid-crystal breakdow...
متن کاملThe evolution of the parametric models of drawings (modules) in the enterprises reconstruction CAD system
Обсуждается развитие методов автоматизации подготовки чертежей на основе так называемых модулей, содержащих одновременно параметрическое представление части чертежа и соответствующие геометрические элементы. Как этапы эволюции модульной технологии автоматизации проектирования рассматриваются варианты применения модулей для простого объединения элементов без параметрического представления с возм...
متن کاملDilatonic Parallelizable NS-NS Backgrounds
We complete the classification of parallelizable NS-NS backgrounds in type II super-gravity by adding the dilatonic case to the result of Figueroa-O'Farrill on the non-dilatonic case. We also study the supersymmetry of these parallelizable backgrounds. It is shown that all the dilatonic parallelizable backgrounds have sixteen supersymmetries. The parallelizable pp-wave backgrounds have been rec...
متن کامل50 TO 70 GHz InP/InGaAs HBT AMPLIFIER WITH 20 dB GAIN
In this paper the design and a complete characterization of an InP/InGaAs single heterojunction bipolar (SHBT) mm-wave amplifier is described. The circuit is designed for the 60 GHz band allocated for wireless LAN and mobile communications. The amplifier achieves a gain of 20 dB from 50 GHz to 70 GHz. Beside S-parameter noise and gain compression measurements are presented. No comparable HBT am...
متن کامل50-nm E-mode In0.7Ga0.3As PHEMTs on 100-mm InP substrate with fmax > 1 THz
Abstract We have demonstrated 50-nm enhancement-mode (E-mode) In0.7Ga0.3As PHEMTs with fmax in excess of 1 THz. The devices feature a Pt gate sinking process to effectively thin down the In0.52Al0.48As barrier layer, together with a two-step recess process. The fabricated device with Lg = 50-nm exhibits VT = 0.1 V, gm,max = 1.75 mS/μm, fT = 465 GHz and fmax = 1.06 THz at a moderate value of VDS...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Pis?ma v Žurnal tehni?eskoj fiziki
سال: 2023
ISSN: ['1726-7471', '0320-0116']
DOI: https://doi.org/10.21883/pjtf.2023.16.55965.19602